any changing of specification will not be informed individual BAV99W dual series chips surface mount switching diode maximum ratings (each diode) rating symbol value unit reverse voltage v r 70 vdc forward current i f 215 madc peak forward surge current i fm(surge) 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (1) t a = 25 c derate above 25 c p d 200 1.6 mw mw/ c thermal resistance, junction to ambient r ja 625 c/w total device dissipation alumina substrate, (2) t a = 25 c derate above 25 c p d 300 2.4 mw mw/ c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ? 65 to +150 c d e v i c e m a r k i n g b a v 9 9 w = a 7 , k j g - j u n - 2 0 0 4 r e v . b electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min max unit off characteristics reverse breakdown voltage (i (br) = 100 adc) v (br) 70 ? vdc reverse voltage leakage current (v r = 25 vdc, t j = 150 c) (v r = 70 vdc) (v r = 70 vdc, t j = 150 c) i r ? ? ? 30 2.5 50 adc diode capacitance (v r = 0, f = 1.0 mhz) c d ? 1.5 pf forward voltage (i f = 1.0 madc) (i f = 10 madc) (i f = 50 madc) (i f = 150 madc) v f ? ? ? ? 715 855 1000 1250 mvdc reverse recovery time (i f = i r = 10 madc, i r(rec) = 1.0 madc) (figure 1) r l = 100 ? t rr ? 6.0 ns 1 . f r ? 5 = 1 . 0 x 0 . 7 5 x 0 . 0 6 2 i n . 2 . a l u m i n a = 0 . 4 x 0 . 3 x 0 . 0 2 4 i n . 9 9 . 5 % a l u m i n a . f e a t u r e s f a s t s w i t c h i n g s p e e d s u r f a c e m o u n t p a c k a g e i d e a l l y s u i t e d f o r a u t o m a t i c i n s e r t i o n f o r g e n e r a l p u r p o s e s w i t c h i n g a p p l i c a t i o n s h i g h c o n d u c t a n c e 3 1 2 c a t h o d e a n o d e a n o d e c a t h o d e dim m i n max a 1.800 2.200 b 1.150 1.350 c 0.800 1.000 d 0.300 0.400 g 1.200 1.400 h 0.000 0.100 j 0.100 0.250 k 0.350 0.500 l 0.590 0.720 s 2.000 2.400 v 0.280 0.420 all dimension in mm sot-323(sc-70) k j c h l a b s g v 3 1 2 d t o p v i e w http://www.secosgmbh.com elektronische bauelemente sc-70 sot-323 0 1 p a g e 1 o f 2 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual BAV99W dual series chips surface mount switching diode 100 0.2 0.4 v f , f orward voltage (v) 0.6 0.8 1.0 1.2 10 1.0 0.1 t a = 85 c 10 0 v r , r everse voltage (v) 1.0 0.1 0.01 0.001 10 20 30 40 50 0.68 0 v r , r everse voltage (v) 0.64 0.60 0.56 0.52 c d , d iode capacitance (pf) 2468 i f , f orward current (ma) (ma) figure 2. forward voltage figure 3. leakage current figure 4. capacitance t a = ? 40 c t a = 25 c t a = 150 c t a = 125 c t a = 85 c t a = 55 c t a = 25 c i r , r everse current ( a) notes: 1. a 2.0 k ? variable resistor adjusted for a forward current (i f ) of 10 ma. notes: 2. input pulse is adjusted so i r(peak) is equal to 10 ma. notes: 3. t p ? t rr +10 v 2.0 k 820 ? 0.1 f dut v r 100 h 0.1 f 50 ? output pulse generator 50 ? i nput sampling oscilloscopes t r t p t 10% 90% i f i r t rr t i r(rec) = 1.0 ma output pulse (i f = i r = 10 ma; measured at i r(rec) = 1.0 ma) i f input signal figure 1. recovery time equivalent test circuit h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e 0 1 - j u n - 2 0 0 4 r e v . b p a g e 2 o f 2
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